FDT86246 datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

General Description
* Max rDS(on) = 236 mΩ at VGS = 10 V, ID = 2 A
* Max rDS(on) = 329 mΩ at VGS = 6 V, ID = 1.7 A
* High performance trench technology for .

Application

* Load Switch
* Primary Switch D SOT-223 S D G D GDS MOSFET Maximum Ratings TA = 25 °C unless otherwise not.

Description

* Max rDS(on) = 236 mΩ at VGS = 10 V, ID = 2 A
* Max rDS(on) = 329 mΩ at VGS = 6 V, ID = 1.7 A
* High performance trench technology for extremely low rDS(on)
* High power and current handling capability in a widely used surface mount.

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